Semiconductors

• Hot-electron fluctuations and transistor performance: hot-phonon effects

  A. Matulionis, H. Morkoç

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• Monte Carlo simulation of THz frequency Gunn effect in GaAs MOSFET with excess of electrons in channel at impact ionization conditions

  V. Gružinskis, E. Starikov, P. Shiktorov

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• Zener-like breakdown in dielectrics at optical frequencies

  V. L. Komolov

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• Tuning of resonance frequency in array of split-ring resonators in terahertz range

  G. Šlekas, Ž. Kancleris, D. Seliuta

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• Hot-electron noise features in silicon crystals operating under periodic signals

  D. Persano Adorno, M.A. Lodato, N. Pizzolato, B. Spagnolo

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• Monte Carlo simulation of spin relaxation of conduction electrons in silicon

  D. Persano Adorno, C. Graceffa, N. Pizzolato, M.A. Lodato

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• Analysis of p-n junction boundary conditions at high-level injection of minority carriers

  A. Baškys

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• Clifford algebra approach to graphene flatland

  A. Dargys

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• Slow relaxation of resistance in nanostructured La0.83Sr0.17MnO3 films induced by pulsed magnetic fields

  D. Pavilonis, N. Žurauskienė

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• Ultrafast carrier dynamics in GaAs nanowires

  V.N. Trukhin, A.D. Buravlev, V. Dhaka, G.E. Cirlin, I.A. Mustafin, M.A. Kaliteevski, H. Lipsanen, Yu.B. Samsonenko

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• Impurity-related terahertz emission from quantum well nanostructures

  D.A. Firsov, L.E. Vorobjev, V.Yu. Panevin, A.N. Sofronov, R.M. Balagula, D.V. Kozlov

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• Non-resonant tunnelling in short-period superlattices with optical cavities

  M.S. Kagan, I.V. Altukhov, S.K. Paprotskiy, A.N. Baranov, R. Teissier, N.D. Il’inskaya, A.A. Usikova, A.D. Buravlev, V.M. Ustinov

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• Optical features of InAs quantum dots-in-a-well structures

  R. Nedzinskas, B. Čechavičius, A. Rimkus, J. Kavaliauskas, G. Valušis, L.H. Li, E.H. Linfield

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• Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

  A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gružinskis

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• Gate length impact on plasma oscillations due to homojunctions in InGaAs FET/HEMT structures

  P. Shiktorov, E. Starikov, V. Gružinskis

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