Analysis of p-n junction boundary conditions at high-level injection of minority carriers

Abstract

The equations of boundary conditions of the junction, which can be an alternative to the commonly used exponential equations, are proposed. The derived equations take into account the main event that arises at the high-level injection – dependence of majority carrier boundary concentrations on voltage drop across the depletion region that is essential for the p-n junctions of the present-day semiconductor devices, but is not reflected in the exponential equations of boundary conditions.