Hot-electron fluctuations and transistor performance: hot-phonon effects

Abstract

The frequency performance of a GaN heterostructure field-effect transistor is discussed in terms of plasmon-assisted dissipation of LO-mode heat accumulated by non-equilibrium longitudinal optical phonons (hot phonons). Hot phonons cause additional scattering of electrons and also facilitate defect formation. Plasmon–LO-phonon resonance is experimentally resolved in a wide range of experiments such as fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor reliability, and transistor phase noise.