Enhancement of excitonic photoluminescence in silicon-doped n+/i-GaAs structures

Abstract

We present photoluminescence spectra of a molecular beam epitaxy grown GaAs structure consisting of the layer of intrinsic conductivity having 500 nm thickness and capped with silicon-doped 100 nm thick layer. The spectra were measured in the range of 3.6–77 K crystal lattice temperatures and at various laser excitation energies. Possible mechanisms of experimentally observed excitonic line narrowing and intensity enhancement in n⁺/i-GaAs homojunction are discussed.
Keywords: GaAs homojunction, photoliuminescence, exciton
PACS: 78.55.-m, 71.55.Eq