Sensitivity improvement in porous siliconmicrowave detector

Anotacija

Attempts to use microporous silicon structures in detection of microwave radiation were investigated. Point-contact-like samples containing microporous silicon layers were manufactured using traditional technique of electrochemical etching of p-type crystalline silicon. The response of the structures to microwave radiation of 10 GHz frequency was studied. It is shown that the microporous silicon containing samples exhibited sensitivity by several orders higher than that of similar detectors having no porous layers. The results were analysed within the model of hot carrier effects. Keywords: porous silicon, microwave, detection, hot carriers