Quantum and transport scattering times in AlGaAs/InGaAs nanoheterostructures with AlAs inserts in the spacer layer

G.B. Galiev; I.S. Vasil’evskii; E.A. Klimov; D.S. Ponomarev; R.A. Khabibullin; V.A. Kulbachinskii; D.V. Gromov; P.P. Maltsev

doi:10.3952/physics.v55i4.3220

G.B. Galiev
I.S. Vasil’evskii
E.A. Klimov
D.S. Ponomarev
R.A. Khabibullin
V.A. Kulbachinskii
D.V. Gromov
P.P. Maltsev

DOI: https://doi.org/10.3952/physics.v55i4.3220

Keywords: AlAs inserts, quantum and transport scattering times, scattering mechanisms, nanoheterostructure

Abstract

The influence of nano-sized AlAs inserts in the spacer layer AlGaAs on scattering mechanisms of AlGaAs/InGaAs nanoheterostructures has been considered. It was shown that the introduction of AlAs lead to mobility enhancement up to 20%. The ratio of transport-to-quantum scattering times revealed that in the case of the spacer with AlAs inserts the scattering on ionized Si-donors is strongly decreased in comparison to the spacer without AlAs.