Articles

• Introduction

  Gintaras Valušis, Xi-Cheng Zhang

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• Terahertz photonics of microplasma and beyond

  X.-C. Zhang, F. Buccheri

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• Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors

  K. Peng, P. Parkinson, L. Fu, Q. Gao, J. Boland, Y.-N. Guo, N. Jian, H.H. Tan, M.B. Johnston, C. Jagadish

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• Second order nonlinear optical processes in [111] cubic crystals for terahertz optoelectronics

  G. Gaborit, F. Sanjuan, J.-L. Coutaz

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• Towards gas sensing with vertically aligned carbon nanotubes interrogated by THz radiation pulses

  W. Zouaghi, L. Hussein, M.D. Thomson, Q. Islam, N. Nicoloso, T. Heinlein, J. Engstler, J.J. Schneider, H.G. Roskos

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• Radiative recombination and other processes related to excess charge carriers, decisive for efficient performance of electronic devices

  A. Wincukiewicz, W. Mech, S. Grankowska, A. Wolos, A. Drabinska, T. Slupinski, K.P. Korona, M. Kaminska

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• Spatial and temporal coherence in optical parametric devices pumped with multimode beams

  V. Pašiškevičius, V. Smilgevičius, R. Butkus, R. Coetzee, F. Laurell

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• Multimode scanning near-field photoluminescence spectroscopy and its application for studies of InGaN epitaxial layers and quantum wells

  S. Marcinkevičius, T.K. Uždavinys, R. Ivanov, M. Mensi

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• Characterization of ultrafast InGaAs photoconductors and their application to signal processing in radio-over-fibre telecommunications

  R. Horvath, J.-F. Roux, J.-L. Coutaz, J. Poëtte

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• Compact diffractive optics for THz imaging

  L. Minkevičius, S. Indrišiūnas, R. Šniaukas, G. Račiukaitis, V. Janonis, V. Tamošiūnas, I. Kašalynas, G. Valušis

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• Influence of laser irradiation on optical properties of GaAsBi/GaAs quantum wells

  J. Aleknavičius, E. Pozingytė, R. Butkutė, A. Krotkus, G. Tamulaitis

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• Study of surface electric field and photocarrier dynamics in InAs by means of a modified double-pump-pulse terahertz emission method

  I. Beleckaitė, L. Burakauskas, R. Adomavičius

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• Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions

  S. Stanionytė, A. Vailionis, V. Bukauskas, S. Tumėnas, A. Bičiūnas, A. Arlauskas, R. Butkutė, A. Krotkus

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