Sum-frequency generation and amplification processes in semiconductor superlattices

Abstract

Semiconductor superlattices are very well-known structures due to their specific electron transport properties, making them extremely attractive to be employed in electronic or optoelectronic devices. The interest in such structures has been recently additionally stirred up due to the first successful experimental demonstration of parametric gain in GaAs/AlGaAs superlattices, resulting in the generation of harmonics, half-harmonics and fractional harmonics. This invention paves the way for a successful realization of superlattice-based generators and amplifiers up to the terahertz frequency range. Despite the emerging experimental results and decade-long theoretical research, unresolved aspects, related to the physical processes inside the superlattices, persist. Lately, the biasing effect was extensively analysed for the case of degenerate processes in the superlattice; however, the non-degenerate case was left out of frame until now. Within this research, we further expand the boundaries of previous investigation by exploring the differences of non-degenerate processes. The study uncovers the asymmetry appearance of the probe field vs. relative phase dependences as well as the possibility of parametric fractional frequency generation. Finally, the concept of energy reflow between two participating probes is predicted and discussed.