Photoluminescence characterisation of GaAs/AlGaAs structures designed for microwave and terahertz detectors

A. Čerškus; J. Kundrotas; V. Nargelienė; A. Sužiedėlis; S. Ašmontas; J. Gradauskas; A. Johannessenc; E. Johannessen

doi:10.3952/physics.v51i4.2253

A. Čerškus
J. Kundrotas
V. Nargelienė
A. Sužiedėlis
S. Ašmontas
J. Gradauskas
A. Johannessenc
E. Johannessen

DOI: https://doi.org/10.3952/physics.v51i4.2253

Keywords: GaAs, AlGaAs, homojunction, photoluminescence, exciton, PL enhancement

Abstract

The photoluminescence (PL) spectra of GaAs/AlGaAs structures designed for microwave and terahertz detectors were investigated. Detailed experimental results of PL were obtained both before and after etching of the heavily doped layers. Possible mechanisms of carrier recombination are discussed and certain emphasis is put on the up to 20 times enhancement of the PL intensity observed in these detector structures.