Electron transport in modulation-doped InAlAs/InGaAs/InAlAs and AlGaAs/InGaAs/AlGaAs heterostructures

J. Požela; K. Požela; V. Jucienė; A. Sužiedėlis; N. Žurauskienė; A.S. Shkolnik

doi:10.3952/physics.v51i4.2245

J. Požela
K. Požela
V. Jucienė
A. Sužiedėlis
N. Žurauskienė
A.S. Shkolnik

DOI: https://doi.org/10.3952/physics.v51i4.2245

Keywords: electron transport, electron–phonon scattering, InAlAs/InGaAs/InAlAs heterostructures, AlGaAs/InGaAs/AlGaAs heterostructures

Abstract

The possibilities of enhancing the electron mobility and high-field drift velocity in channels of modulation-doped InAlAs/InGaAs and AlGaAs/InGaAs quantum wells by tuning interaction of electrons with interface phonons are tested and reviewed. A large increase in the mobility is achieved in a novel metamorphic In0.7Al0.3As/In0.8Ga0.2As structure with the high InAs content in the InAlAs barrier layer as well as in the AlxGa1-xAs/In0.2Ga0.8As structure with the low AlAs content in the AlGaAs barrier layer. An enhancement in the electron mobility by inserting thin InAs layers into the In0.52Al0.48As/In0.53Ga0.47As quantum well is obtained. The electron drift velocity saturates at high electric fields of 1.5–5 kV/cm and achieves a maximal value of 2.5 . 107 cm/s in the InGaAs quantum well with the thin InAs and GaAs inserts.