Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

V. Jakštas, J. Jorudas, V. Janonis, L. Minkevičius, I. Kašalynas, P. Prystawko, M. Leszczynski

Abstract


This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices demonstrate an improved performance in comparison with the ones processed on a sapphire substrate. Both the SDs and HEMTs show much smaller leakage current density and a higher ION/IOFF ratio, reaching values down to 3.0±1.2 mA/cm2 and up to 70 dB under the reverse electric field of 340 kV/cm, respectively. The higher thermal conductivity of the SiC substrate leads to the increase of steady current and transconductance, and better thermal management of the HEMT devices. In addition, a successful detection of terahertz (THz) waves with the AlGaN/GaN HEMT is demonstrated at room temperature. These results open further routes for the optimization of THz designs which may result in development of novel plasmonic THz devices.

Keywords


SiC; GaN; Schottky diode; high electron mobility transistor; THz detection

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DOI: https://doi.org/10.3952/physics.v58i2.3748

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ISSN 1648-8504 (Print)
ISSN 2424-3647 (Online)