Influence of laser irradiation on optical properties of GaAsBi/GaAs quantum wells

J. Aleknavičius, E. Pozingytė, R. Butkutė, A. Krotkus, G. Tamulaitis


This paper is focused on investigation of the impact of laser irradiation on the structural and optical properties of bismide-based multiple quantum wells (MQWs). The MQW structures, composed of 5 GaAsBi quantum wells, 7 nm thick, separated by 10 nm-thick GaAs barriers, were grown by molecular beam epitaxy on GaAs (100)-plane oriented semi-insulating substrates at 330°C temperature. The bismuth content in as-grown GaAsBi wells evaluated from the measurements of HR-XRD rocking curves was about 6%. HR-TEM and AFM studies of the MQWs evidenced sharp interfaces between the wells and barriers, and a smooth, droplet-free surface, respectively. HR-TEM images also evidenced a homogeneous bismuth distribution in the wells. The spatially-resolved photoluminescence study of GaAsBi/GaAs MQWs revealed the enhancement of PL emission efficiency of up to 80% with no shift of the spectral position after intense laser irradiation. The obtained results were explained by improvement of the GaAsBi crystal quality.


molecular beam epitaxy; quantum wells; atomic force microscopy; spatially-resolved photoluminescence

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ISSN 1648-8504 (Print)
ISSN 2424-3647 (Online)