Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

L. Ardaravičius, O. Kiprijanovič, J. Liberis

Abstract


Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated as ~1.5×107 cm/s and is ~50% higher as compared with the standard AlN-spacer GaN 2DEG channel. The HFET with the pristine 2DEG density of 1.75×1013 cm–2 confined in the coupled channel demonstrates the optimal frequency performance in terms of electron velocity at a relatively low gate bias of VGS = –1.75 V. These results are consistent with the ultra-fast decay of hot phonons.

Keywords


nitride heterostructure; HFET; electron drift velocity; hot phonons; high electric fields

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DOI: http://dx.doi.org/10.3952/physics.v56i4.3418

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ISSN 1648-8504 (Print)
ISSN 2424-3647 (Online)