Migration-enhanced epitaxy of thin GaAsBi layers

Abstract

Thin GaAsBi layers and bismide-based multiple quantum structures were grown by migration-enhanced epitaxy onto GaAs(100) substrates at 140–240 °C temperatures. The Bi content in GaAs, evaluated from high-resolution X-ray diffraction scans, varied from 2.5 to 10.3% depending on growth temperature, Bi and As atomic ratio as well as on the sequence of Ga, Bi, and As molecular supplies. The atomic force microscopy revealed a tendency of smoothening of the GaAsBi surface with substrate temperature decreasing. Transmission electron microscopy investigations evidenced high crystalline material quality of GaAsBi quantum wells and GaAs barriers.